Self-Compensation in Manganese-Doped Ferromagnetic Semiconductors

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

Rights: © 2011 American Physical Society (APS). This is the accepted version of the following article: Look, D. C. & Leedy, K. D. & Vines, L. & Svensson, B. G. & Zubiaga, A. & Tuomisto, Filip & Doutt, D. R. & Brillson, L. J. 2011. Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO. Physical Review B. Volume 84, Issue 11. 115202/1-6. ISSN 1098-0121 (printed). DOI: 10.1103/physre...

Ferromagnetic semiconductors

The current status and prospects of research on ferromagnetism in semiconductors are reviewed. The question of the origin of ferromagnetism in europium chalcogenides, chromium spinels and, particularly, in diluted magnetic semiconductors is addressed. The nature of electronic states derived from 3d of magnetic impurities is discussed in some detail. Results of a quantitative comparison between ...

Spin Transport Properties of Manganese Doped Nanostructured Magnetic Semiconductors

Why ferromagnetic semiconductors ?

Rapid development of information technologies originates from the exponential increase in the density of information that can be processed, stored, and transfer by the unit area of relevant devices. There is, however, a growing amount of evidences that the progress achieved in this way approaches its limits. Various novel ideas put forward to circumvent barriers ahead are described. Particular ...

Intrinsic domain-wall resistance in ferromagnetic semiconductors.

Transport through zinc blende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the effective hole spin-orbit interaction. The intrinsic resistance is independent of the domain-wall shape and width and survives the adiabatic limit. For typical parameters, the intrinsic domain-wall resistance ...